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  savantic semiconductor product specification silicon npn power transistors 2SC4747 d escription with to-3pfm package high speed switching high breakdown voltage applications character display horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 10 a i c(surge) collector current-surge 20 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pfm) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SC4747 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;r be =0 800 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 6 v i ces collector cut-off current v ce =1500v; r be =0 0.5 ma h fe dc current gain i c =1a ; v ce =5v 8 30 v ce(sat) collector-emitter saturation voltage i c =8a ; i b =1.6a 5 v v be(sat) base-emitter saturation voltage i c =8a ; i b =1.6a 1.5 v t f fall time i cp =7a;i b1 =1.4a 0.3 s downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SC4747 package outline fig.2 outline dimensions downloaded from: http:///
savantic semiconductor product specification 4 silicon npn power transistors 2SC4747 downloaded from: http:///


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